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Samsung agrees to use TSMC’s 3nm process for Nvidia custom HBM

19 OCTOBER 2026·2 MIN READ·2 SOURCES

Samsung’s Device Solutions division agreed to Nvidia’s request to use TSMC’s 3-nanometer process for the base die of Nvidia’s custom NVHBM memory, Seoul Economic Daily reported.

Samsung agrees to use TSMC’s 3nm process for Nvidia custom HBM

Key takeaways · 4

  • 01

    Samsung agreed to Nvidia’s request for a TSMC 3nm process on NVHBM’s base die.

  • 02

    Nvidia requested that the core die use the 1c DRAM process.

  • 03

    Nvidia asked Samsung, SK hynix and Micron to produce NVHBM.

  • 04

    Samsung is evaluating its own foundry as a possible option for the base die, according to an industry official cited in the report.

A supplier-specific manufacturing change

Seoul Economic Daily reported on October 18, 2026, that Samsung agreed to Nvidia’s request following an internal review by Samsung’s Device Solutions division.[1] The NVHBM base die is to be made using TSMC’s 3-nanometer process, according to the report.[1] Nvidia unveiled the custom HBM in August, and the report describes NVHBM as based on the HBM4E architecture.[1] The agreement concerns this Nvidia product; Samsung plans to retain its turnkey approach for standard HBM and for custom HBM supplied to other customers, including AMD.[1]

The dies have different process requests

Nvidia also requested that the NVHBM core die use 1c, a sixth-generation DRAM process, Seoul Economic Daily reported.[1] The base die and core die therefore have distinct roles in the reported manufacturing plan: TSMC’s 3nm process for the base die, and 1c for the core die.[1] The custom design integrates a memory controller directly into the base die, according to The News International.[2] Samsung already makes HBM4 and HBM4E core dies on 1c lines at its Hwaseong and Pyeongtaek campuses, the report said.[1]

Nvidia wants suppliers to align

Nvidia asked Samsung, SK hynix and Micron to produce NVHBM.[1] Seoul Economic Daily reported that differing manufacturing methods among HBM suppliers make it difficult to get consistent performance from a single design.[1] Standardizing the approach is also intended to reduce the need to validate products separately for each supplier, according to the report.[1] For teams assessing the arrangement, the stated rationale is coordination across suppliers—not evidence that the suppliers’ manufacturing processes or product results are identical.[1]

Samsung is keeping another option open

Samsung had previously produced both the core and base dies for all of its HBM supply, according to Seoul Economic Daily.[1] The reported TSMC collaboration is the first time the companies have partnered at the HBM manufacturing stage; they had earlier worked together on packaging-process compatibility when connecting HBM to graphics processors.[1] An industry official cited by the paper said Samsung is evaluating whether its own foundry can make the NVHBM base die, as a hedge in case demand exceeds TSMC’s capacity.[1] The report does not say that Samsung has decided to move base-die production to its own foundry.[1]

For engineering and sourcing teams, the report points to a custom memory design whose base and core dies may use different manufacturing processes. It also makes supplier alignment and the distinction between a confirmed agreement and Samsung’s ongoing foundry evaluation important considerations in planning.

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How this developed

  1. 19 October 2026

    Samsung agrees to use TSMC’s 3nm process for Nvidia custom HBM

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